Navitas Launches 5th-Gen SiC MOSFET Technology to Power Next-Generation Data Centers

Navitas Semiconductor (Nasdaq: NVTS) has introduced its latest generation of silicon carbide (SiC) MOSFET technology designed to address the escalating power conversion demands of AI infrastructure and energy systems. The company announced the 5th generation GeneSiC platform on February 12, 2026, marking a substantial leap forward in high-voltage semiconductor performance. This new architecture combines cutting-edge trench-assisted planar design with enhanced reliability specifications, positioning Navitas as a key player in the MOSFET technology space serving data centers and grid infrastructure.

The breakthrough comes at a critical juncture when AI data centers and renewable energy facilities require more efficient, compact power electronics to handle rising operational demands. Navitas’ updated MOSFET platform addresses these challenges through its most sophisticated TAP architecture to date, offering industry professionals a pathway to reduce energy consumption and operational costs in demanding applications.

Performance Breakthrough: What 35% Better Efficiency Means

The 5th generation MOSFET technology delivers a landmark 35% improvement in the RDS,ON × QGD figure of merit compared to the previous 1200V generation, fundamentally changing how system designers approach power stage optimization. This advancement directly translates to reduced switching losses, cooler device operation, and the ability to operate at higher frequencies without compromising stability.

The technology achieves an additional ~25% enhancement in the QGD/QGS ratio, enabling faster gate response times. When combined with the platform’s robust high threshold voltage specification (VGS,TH ≥ 3V), the new MOSFET generation demonstrates exceptional immunity against parasitic turn-on events. This characteristic proves especially valuable in high-noise industrial environments where signal integrity directly impacts system reliability.

The 5th generation platform further optimizes the RDS(ON) × EOSS characteristic while integrating proprietary soft body-diode technology. This integration minimizes electromagnetic interference (EMI) during high-speed switching cycles and ensures smoother commutation, delivering system-level stability improvements that extend far beyond the individual MOSFET’s performance envelope.

Enhanced Reliability Standards for Mission-Critical Applications

Navitas subjected this MOSFET generation to AEC-Plus qualification testing, which exceeds standard industry benchmarks for automotive and industrial reliability. The validation includes:

• Extended static testing protocols running 3x longer than conventional stress procedures (HTRB, HTGB, HTGB-R)
• Advanced dynamic reliability testing including reverse bias stress (DRB) and gate-switching stress (DGS) to simulate real-world fast-switching mission profiles
• Lowest VGS,TH shift measurements over extended switching cycles, ensuring predictable long-term efficiency performance
• Gate oxide reliability extrapolation exceeding 1 million years at operating voltage (18V) and 175°C junction temperature
• Enhanced cosmic ray resilience with exceptionally low FIT (Failure In Time) rates for high-altitude and continuous-operation environments

These specifications directly address the reliability concerns of infrastructure operators who depend on semiconductor devices to maintain system uptime and predictable performance across decades of operation.

Complementing GaN Technology Across Power Semiconductor Spectrum

The new SiC MOSFET generation complements Navitas’ existing ultra-high voltage offerings from the 4th generation GeneSiC platform (2300V and 3300V lines), creating a comprehensive portfolio spanning voltage ranges. This approach allows system designers to select the optimal MOSFET technology—whether GaN-based or SiC-based—depending on specific application requirements across AI data centers, grid infrastructure, and industrial electrification systems.

Navitas’ strategy reflects the company’s 30+ years of combined expertise in wide bandgap semiconductor technologies. The GaNFast line continues to deliver rapid power delivery and high density, while the expanding GeneSiC MOSFET portfolio addresses medium-voltage applications requiring superior efficiency and proven long-term reliability.

Market Impact and Future Development

Paul Wheeler, VP and General Manager of Navitas’ SiC Business Unit, emphasized the company’s commitment to supporting customers navigating the power conversion boundaries of next-generation infrastructure: “Significant technological improvements in our 5th generation GeneSiC technology underscore Navitas’ commitment to delivering industry-leading performance and reliability in silicon carbide MOSFETs.”

Navitas plans to announce new products leveraging this 5th generation MOSFET platform in the coming months. The company has published a comprehensive white paper on Trench-Assisted Planar technology available for download, providing system designers with detailed technical guidance for implementation.

With over 300 patents issued or pending and recognition as the world’s first CarbonNeutral-certified semiconductor company, Navitas continues to establish benchmarks for power semiconductor innovation in the MOSFET and wide bandgap technology sectors.